2N4037 Datasheet, PDF (1/3 Pages) New Jersey Semi-Conductor Products, Inc. – MEDIUM-POWER SILICON P-N-P PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EXPITAXIAL TRANSISTOR.
2N4037
TO-39
Metal Can Package
MEDIUM POWER AMPLIFIER AND SWITCHING APPLICATIONS.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO(sus) *
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Base Current
I_B
Continuous Power Dissipation
P_D
@ or Below Ta=25ºC
Linear Derating Dissipation
Operating And Storage Junction
T_j, T_stg
Temperature Range
* Must not be tested on a curve tracer.
VALUE
40
60
7.0
1.0
0.5
1.0
5.72
-65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter susstaining Voltage V_(BR)CEO(sus)
I_C=100mA,I_B=0
Collector Base Breakdown Voltage
V_(BR)CBO
I_C=100µA,I_E=0
Collector Cut off Current
I_CBO
V_CB=60V, I_E=0
Emitter Cut off Current
I_EBO
V_BE=5V, I_C=0
DC Current Gain
hFE
I_C=1mA,V_CE=10V
I_C=150mA,V_CE=10V
Collector Emitter (sat) Voltage
V_CE(Sat)
I_C=150mA,I_B=15mA
Base Emitter Voltage
V_BE(0n)
I_C=150mA,V_CE=10V
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Base Capacitance
Current Gain -High Frequency
C_cb
| h_fe |
V_CB= 10V, f=20MHz
I_C =50mA, V_CE=10V,
f=20MHz
VALUE
>40
>60
<250
<20
>15
50-250
<1.4
<1.5
VALUE
<30
3.0-1.0
UNITS
V
V
V
A
A
W
mW/ºC
ºC
UNITS
V
V
nA
nA
V
V
UNITS
pF
Continental Device India Limited
Data Sheet
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