2N3905 Datasheet, PDF (1/5 Pages) ON Semiconductor – General Purpose Transistors(PNP Silicon)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS
2N3905 / 2N3906
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
E^BC
General Purpose Switching And Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
V_CEO
V_CBO
Emitter Base Voltage
Collector Current Continuous
V_EBO
I_C
Power Dissipation T_a=25ºC
P_D
Derate Above 25ºC
Power Dissipation T_a=60ºC
P_D
Power Dissipation T_c=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
T_j, T_stg
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
R_{th (j-c)}
Rth _(j-a)
VALUE
40
40
5.0
200
625
5.0
250
1.5
12
-55 to +150
83.3
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
V_CBO
I_C=10µA. I_E=0
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
Collector Cut Off Current
I_CEX
V_CE=30V, V_EB=3V
Base Cut Off Current
I_BL
V_CE=30V, V_EB=3V
DC Current Gain
*h_FE
I_C=0.1mA, V_CE=1V
I_C=1mA, V_CE=1V
I_C=10mA, V_CE=1V
I_C=50mA, V_CE=1V
I_C=100mA, V_CE=1V
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
*Pulse Condition: =300µs, Duty Cycle=2%
2N3905_3906Rev_1 071105E
2N3905 2N3906
>40
>40
>40
>40
>5.0
>5.0
< 50
< 50
< 50
< 50
>30
>60
>40
>80
50-150 100-300
>30
>60
>15
>30
< 0.25 < 0.25
< 0.40 < 0.40
0.65 - 0.85 0.65 - 0.85
< 0.95 < 0.95
UNITS
V
V
V
mA
mW
mW/ºC
mW
W
mW/ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nA
nA
V
V
V
V
Continental Device India Limited
Data Sheet
Page 1 of 5