2N3704 Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3704 2N3705
TO-92
Plastic Package
For Lead Free Parts, Device Part #
will be Prefixed with "T"
ECB
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation at T_a=25ºC
Derate Above 25ºC
V_CBO
V_EBO
I_C
P_D
Operating And Storage Junction
Temperature Range
T_j, T_stg
2N3704
30
50
5.0
600
625
5.0
- 55 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Base Voltage
V_CBO
I_C=100µA, I_E=0
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
DC Current Gain
*h_FE
V_CE=2V, I_C=50mA
2N3704
Collector Cut Off Current
Emitter Cut Off Current
2N3705
I_CBO
V_CB=20V, I_E=0
I_EBO
V_EB=3V, I_C=0
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=100mA, I_B=5mA
Base Emitter (On) Voltage
*V_{BE (on)}
2N3704
2N3705
I_C=100mA, V_CE=2V
2N3705
MIN MAX
30
50
5.0
100 300
50
150
100
100
0.6
0.8
0.5
1.0
DYNAMIC CHARACTERISTICS
DESCRIPTION
Transistors Frequency
Output Capacitance
SYMBOL
TEST CONDITION
MIN MAX
f_T
I_C=50mA, V_CE=2V, f=20MHz 100
C_ob
I_E=0, V_CB=10V, f=1MHz
12
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N3704_2N3705Rev_1 081205E
UNIT
V
V
V
mA
mW
mW/ºC
ºC
ºC/W
UNIT
V
V
V
nA
nA
V
V
V
UNIT
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 4