2N3700 Datasheet, PDF (1/3 Pages) STMicroelectronics – GENERAL PURPOSE AMPLIFIERS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3700
2N3701
TO-18
General purpose amplifier
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
140
Collector -Emitter Voltage
VCEO
80
Emitter -Base Voltage
VEBO
7.0
Collector Current
IC
1.0
Power Dissipation @Ta=25 deg C
PD
500
Derate Above 25 deg C
2.85
@TC=25 deg C
PD
1.8
Derate Above 25 deg C
10.6
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
70
Junction to Ambient
Rth(j-a)
245
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector-Cut off Current
ICBO
VCB=90V, IE=0
-
MAX
10
UNIT
V
V
V
A
mW
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
UNIT
nA
Emitter-Cut off Current
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Emitter (Sat) Voltage
Base Emitter (Sat) Voltage
DC Current Gain
VCB=90V, IE=0
-
10
uA
IEBO
VCBO
VEB=5V, IC=0
IC=100uA, IE=-0
-
10
nA
140
-
V
VCEO*
IC=30mA, IB=0
80
-
V
VEBO
IE=100uA, IC=-0
7.0
-
V
VCE(Sat)* IC=150mA,IB=15mA
-
0.2
V
IC=500mA,IB=50mA
-
0.5
V
VBE(Sat) * IC=150mA,IB=15mA
-
1.1
V
2N3700 2N3701
hFE*
IC=0.1mA,VCE=10V
>50
30-100
IC=10mA,VCE=10V
IC=150mA,VCE=10V
>90
40-12O
100-300 40-12O
IC=500mA,VCE=10V
>50 30-100
IC=1A,VCE=10V
>15
>15
Tc= -55 deg C
IC=150mA,VCE=10V
>40
-
Continental Device India Limited
Data Sheet
Page 1 of 3