2N3635 Datasheet, PDF (1/4 Pages) Seme LAB – PNP SILICON TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR RF TRANSISTORS
2N3635
2N3636
2N3637
TO-39
Metal Can Package
2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching
and Low Power Amplifier.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25ºC
V_CEO
V_CBO
V_EBO
I_C
P_D
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
P_D
Derate Above 25ºC
Operating And Storage Junction
T_j, T_stg
Temperature Range
2N3635
2N3636, 37
140
175
140
175
5
1
1
5.71
5
28.6
-65 to +200
UNITS
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Breakdown Voltage B_VCEO * I_C=10mA, I_B =0
2N3635
2N3636, 37
MIN
MAX
UNITS
140
V
175
V
Collector Base Breakdown Voltage
2N3635
2N3636, 37
B_VCBO
I_C=100µA, I_E =0
140
V
175
V
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
B_VEBO I_E=10µA, I_C=0
I_CBO V_CB=100V, I_E=0
I_EBO V_EB=3V, I_C=0
V_{CE( sat)} * I_C=10mA, I_B =1mA
I_C=50mA, I_B =5mA
V_BE(Sat) * I_C=10mA,I_B=1mA
I_C=50mA,I_B=5mA
5
V
100
nA
50
nA
0.3
V
0.5
V
0.8
V
0.65
0.9
V
Continental Device India Limited
Data Sheet
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