2N3498 Datasheet, PDF (1/5 Pages) Semicoa Semiconductor – Type 2N3498 Geometry 5620 Polarity NPN

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR RF TRANSISTORS
2N3498, 2N3499,
2N3500, 2N3501
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ Ta=25ºC
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
2N3498
2N3499
2N3500
2N3501
100
150
100
150
6
500
300
1.0
5.71
5.0
28.6
-65 to +200
UNITS
V
V
V
mA
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
R_th(j-a)
R_th(j-c)
175
ºC/W
35
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
2N3498/3499
2N3500/3501
BV_CEO*
I_C=10mA,I_B=0
VALUE
MIN TYP MAX
UNITS
100
V
150
V
Collector Base Breakdown Voltage
BV_CBO I_C=10µA, I_E=0
2N3498/3499
100
V
2N3500/3501
150
V
Emitter Base Breakdown Voltage
BV_EBO I_E=10µA, I_C=0
ALL
6
Collector Leakage Current
2N3498/3499 I_CBO V_CB=50V, I_E=0
2N3498/3499
V_CB=50V, I_E=0,T_A=150ºC
2N3500/3501
V_CB=75V, I_E=0
2N3500/3501
V_CB=75V, I_E=0,T_A=150ºC
Emitter Leakage Current
I_EBO
ALL
V_EB=4V, I_C=0
V
50
nA
50
µA
50
nA
50
µA
25
nA
Continental Device India Limited
Data Sheet
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