2N3496 Datasheet, PDF (1/4 Pages) Continental Device India Limited – PNP SILICON PLANAR SWITCHING TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
Q
2N3496
2N3497
TO-18
Metal Can Package
General Purpose Transistors for Switching and Linear Applications.
DC Amplilfier & Driver For Industrial Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N3496
2N3497 UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25ºC
Derate Above 25ºC
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
80
120
V
80
120
V
<---------------------4.5------------------> V
<--------------------100-------------------> mA
<---------------------400------------------- mW
<-------------------2.28-----------------> mW/ºC
<---------------------1.2-----------------> W
<--------------------6.85-----------------> mW/ºC
-65 to +200
ºC
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
2N3496
MIN MAX
2N3497
MIN MAX
UNIT
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BV_CEO*
BV_CBO
BV_EBO
I_CBO
I_EBO
V_CE(Sat)
V_BE(Sat)
I_C=10mA,I_B=0
I_C=10µA.I_E=0
I_E=10µA, I_C=0
V_CB=50V, I_E=0
V_CB=90V, I_E=0
V_EB=3V, I_C=0
I_C=10mA,I_B=1mA
I_C=10mA,I_B=1mA
80
120
V
80
120
V
4.5
4.5
V
100
nA
100
nA
25
25
nA
0.3
0.35
V
0.6 0.9 0.6 0.9
V
DC curent Gain
h_FE I_C=0.1mA,V_CE=10V
35
35
I_C=1mA,V_CE=10V
40
40
I_C=10mA,V_CE=10V
40
40
I_C=50mA,V_CE=10V
40
40
I_C=100mA,V_CE=10V*
35
Continental Device India Limited
Data Sheet
Page 1 of 4