2N3250 Datasheet, PDF (1/4 Pages) Boca Semiconductor Corporation – GENERAL PURPOSE TRANSISTOR (PNP SILICON)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON PLANAR SWITCHING TRANSISTORS
2N3250, A/ 2N3251,A
TO-18
Metal Can Package
Designed for Small Signal, General Purpose and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
2N3250
2N3251
40
50
5
200
360
2.06
1.2
6.9
2N3250A
2N3251A
60
60
- 65 to +200
UNIT
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
490
Junction to Case
R_{th (j-c)}
150
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cutoff Current
Base Cutoff Current
*V_CEO
V_CBO
V_EBO
I_CEX
I_BL
I_C=10mA, I_B=0
I_C=10µA, I_E=0
I_E=10µA, I_C=0
V_CE=40V, V_BE=3V
V_CE=40V, V_BE=3V
2N3250
2N3251
>40
>50
ºC/W
ºC/W
2N3250A UNIT
2N3251A
>60
V
>60
V
>5
V
<20
nA
<50
nA
DESCRIPTION
SYMBOL TEST CONDITION
MIN
MAX UNIT
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
*V_{CE (sat)} I_C=10mA, I_B=1mA
I_C=50mA, I_B=5mA
*V_{BE (sat)}
I_C=10mA, I_B=1mA
0.6
I_C=50mA, I_B=5mA
0.25
V
0.5
V
0.9
V
1.2
V
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N3250_A_2N3251_ARev_1 311003D
Continental Device India Limited
Data Sheet
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