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| 2N3055 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,50V,115W) | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage(RBE=100â¦)
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VCER
VEBO
IC
IB
Ptot
Tj, Tstg
VALUE
100
60
70
7
15
7
115
0.657
- 65 to +200
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
1.52
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
SYMBOL
VCEO(sus)*
VCER(sus)*
ICEX
ICEO
IEBO
VCE(Sat) *
VBE(on) *
hFE*
TEST CONDITION
IC=200mA, IB=0
IC=200mA, RBE=100â¦
VCE=100V, VBE=(off)=1.5V
Tc=150ºC
VCE=100V, VBE=(off)=1.5V
VCE=30V, IB=0
VBE=7V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
MIN
MAX
60
70
1.0
5.0
0.7
5.0
1.1
3.0
1.5
20
70
5
UNITS
V
V
V
V
A
A
W
W/ºC
ºC
ºC/W
UNITS
V
V
mA
mA
mA
V
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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