2N3053 Datasheet, PDF (1/3 Pages) Seme LAB – MEDIUM POWER SILICON NPN PLANAR TRANSISTOR

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N3053 / 2N3053A
TO-39
Metal Can Package
General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Emitter Voltage
V_CEO
Collector Base Voltage
V_CBO
Emitter Base Voltage
V_EBO
Collector Current Continuous
I_C
Power Dissipation at T_c=25ºC
P_D
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
T_j, T_stg
Lead Temperature 1/16", + 1/32" from
Case for 10s
T_L
2N3053
40
60
5.0
0.7
5.0
28.6
- 65 to +200
+235
2N3053A
60
80
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
35
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
Collector Emitter Voltage
V_CER
I_C=1mA, R_BE=10Ω
Collector Base Voltage
Emitter Base Voltage
V_CBO
V_EBO
I_C=100µA, I_E=0
I_E=100µA, I_C=0
Collector Cut Off Current
I_CEX
V_CE=30V, I_E=0, V_BE (off)=1.5V
V_CE=60V, I_E=0, V_BE (off)=1.5V
Emitter Cut Off Current
I_EBO
V_EB=4V, I_C=0
Base Cut Off Current
I_BL
V_CE=60V, I_E=0, V_BE (off)=1.5V
DC Current Gain
*h_FE
I_C=150mA, V_CE=2.5V
I_C=150mA, V_CE=10V
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=150mA, I_B=15mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=150mA, I_B=15mA
Base Emitter On Voltage
*V_{BE (on)}
I_C=150mA, V_CE=2.5V
2N3053 2N3053A
>40
>60
>50
>70
>60
>80
>5.0
<250
<250
<250
<250
>25
50 - 250
<1.4
<0.3
<1.7
0.6 - 1.0
<1.7
<1.0
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
f_T
I_C=50mA, V_CE=10V, f=20MHz
Output Capacitance
C_ob
V_CB=10V, I_E=0, f=140KHz
Input Capacitance
C_ib
V_EB=0.5V, I_C=0, f=140KHz
>100
<15
<80
UNIT
V
V
V
A
W
mW/ ºC
ºC
ºC
ºC/W
UNIT
V
V
V
V
nA
nA
nA
nA
V
V
V
MHz
pF
pF
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N3053_A Rev_1 040406E
Continental Device India Limited
Data Sheet
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