2N3019 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
Designed for use in General Purpose Amplifier and High Speed Switching Applications
These Transistors are also Suitable for High Current Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Power Dissipation @ Ta=25º C
Power Dissipation@ Tc=25ºC
Junction Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
V_CEO
V_CBO
V_EBO
I_CM
P_D
T_j
T_stg
R_th(j-a)
R_th(j-c)
80
140
7
1
800
5
+200
-65 to +200
218.7
35
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
BV_CEO *
BV_CBO
BV_EBO
I_CBO
I_EBO
V_CE(sat) *
V_BE(sat) *
I_C=30mA,I_B=0
80
I_C=100µA, I_E=0
140
I_E=100µA, I_C =O
7
V_CB=90V, I_E=0
10
V_CB=90V, I_E=0, Ta=150ºC
10
V_EB=5V, I_C=0
10
I_C =150mA, I_B =15mA
0.2
I_C =500mA, I_B =50mA
0.5
I_C=150mA, I_B =15mA
1.1
UNITS
V
V
V
A
mW
W
ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
nΑ
µA
nΑ
V
V
V
Continental Device India Limited
Data Sheet
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