2N2906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistors

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PNP SILICON PLANAR SWITCHING TRANSISTORS
2N2906 2N2907
TO-18
Metal Can Package
Switching and Linear Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
40
60
5
600
400
2.28
1.8
10.3
- 65 to +200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Collector Emitter Voltage
*V_CEO
I_C=10mA, I_B=0
40
Collector Base Voltage
V_CBO
I_C=10µA, I_E=0
60
Emitter Base Voltage
V_EBO
I_E=10µA, I_C=0
5
Collector Cut Off Current
I_CEX
V_CE=30V, V_BE=0.5V
Collector Cut Off Current
I_CBO
V_CB=50V, I_E=0
V_CB=50V, I_E=0,
T_a=150ºC
Base Current
I_B
V_CE=30V, V_BE=0.5V
UNIT
V
V
V
mA
mW
mW/ ºC
W
mW/ ºC
ºC
TYP MAX
50
20
20
50
UNIT
V
V
V
nA
nA
µA
nA
DC Current Gain
h_FE
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N2906_2907Rev010303E
I_C=0.1mA, V_CE=10V
I_C=1mA, V_CE=10V
I_C=10mA, V_CE=10V
*I_C=150mA, V_CE=10V
*I_C=500mA, V_CE=10V
2N2906
>20
>25
>35
40 - 120
>20
2N2907
>35
>50
>75
100 - 300
>30
Continental Device India Limited
Data Sheet
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