2N2484 Datasheet, PDF (1/3 Pages) NXP Semiconductors – NPN general purpose transistor

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2484
TO-18
This transistors is primarily intended for use in high performance, low level,
low noise amplifier applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Emitter Voltage
VCEO
Collector -Base Voltage
VCBO
Emitter -Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @Ta=25 degC
PD
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
PD
Derate Above 25 deg C
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
Junction to Ambient in Free Air
Rth(j-a) *
Lead Temperature
TL
1/16" from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector -Emitter Voltage
VCEO** IC=10mA,IB=0
Collector -Base Voltage
VCBO IC=10uA.IE=0
Emitter -Base Voltage
VEBO
IE=10uA, IC=-0
Collector-Cut off Current
ICBO
VCB=45V, IE=0
60
60
6.0
50
360
2.06
1.20
6.85
-65 to +200
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
146
deg C/W
485
deg C/W
300
deg C
Min
MAX UNIT
60
-
V
60
-
V
6.0
-
V
-
10
nA
Emitter-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
IEBO
VCE(Sat)
VBE(on)
Ta=150 deg C
VCB=45V, IE=0
VEB=5V, IC=0
IC=1mA,IB=0.1mA
IC=0.1mA, VCE=5V
-
10
uA
-
10
nA
-
0.35
V
0.5
0.7
V
Continental Device India Limited
Data Sheet
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