2N2270 Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – High-Speed Powwer Transistors(Silicon NPN Planar Transistor)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2270
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, R_BE < 10Ω
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CER
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
45
60
60
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
175
Junction to Case
R_{th (j-c)}
35
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
45
Collector Emitter Voltage
Collector Base Voltage
V_CER
I_C=1mA, R_BE=10Ω
60
V_CBO
I_C=100µA, I_E=0
60
Emitter Base Voltage
V_EBO
I_E=100µA, I_C=0
7
Collector Cut Off Current
I_CBO
V_CB=60V, I_E=0
V_CB=60V, I_E=0, T_a=150ºC
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
Collector Emitter Saturation Voltage *V_{CE (sat)}
I_C=150mA, I_B=15mA
Base Emitter Saturation Voltage
*V_{BE (sat)}
I_C=150mA, I_B=15mA
DC Current Gain
*h_FE
I_C=1mA, V_CE=10V
30
I_C=150mA, V_CE=10V
50
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
UNIT
V
V
V
V
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
TYP MAX
50
100
100
0.9
1.2
UNIT
V
V
V
V
nA
µA
nA
V
V
200
2N2270Rev_1 040904E
Continental Device India Limited
Data Sheet
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