2N2102 Datasheet, PDF (1/4 Pages) STMicroelectronics – EPITAXIAL PLANAR NPN

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N2102
TO-39
Metal Can Package
Amplifier Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage, R_BE < 10Ω
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Derate Above 25ºC
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CER
V_CBO
V_EBO
I_C
P_D
P_D
T_j, T_stg
VALUE
65
80
120
7.0
1.0
1.0
5.71
5.0
28.6
- 65 to +200
THERMAL RESISTANCE
Junction to Ambient in free air
**R_{th (j-a)}
175
Junction to Case
R_{th (j-c)}
35
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
V_CER
I_C=1mA, R_BE=10 Ω
80
Collector Emitter Voltage
V_CEO
I_C=1mA, I_B=0
65
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
V_CEX
I_C=100µA, V_EB=1.5V
120
V_CBO
I_C=100µA, I_E=0
120
V_EBO
I_E=100µA, I_C=0
7
Collector Cut Off Current
I_CBO
V_CB=60V, I_E=0
V_CB=60V, I_E=0, T_a=150ºC
Emitter Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE
I_C=0.1mA, V_CE=10V
20
*I_C=10mA, V_CE=10V
35
*I_C=10mA, V_CE=10V, T_a=55ºC
20
*I_C=150mA, V_CE=10V
40
*I_C=500mA, V_CE=10V
25
*I_C=1A, V_CE=10V
10
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
**R_{th (j-a)} is measured with the device soldered into a typical printed circuit board
2N2102Rev_1 040904E
UNIT
V
V
V
V
A
mW
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
TYP MAX
2
2
2
UNIT
V
V
V
V
V
nA
µA
nA
120
Continental Device India Limited
Data Sheet
Page 1 of 4