 English |
|
|
|
|
|
|
|
| 2N1893 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor | |||
| |||
|
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
2N 1893
TO-39
Metal Can Package
General Purpose Transistors.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total DeviceDissipation @ Ta=25ºC
Derate Above 25ºC
Total Deivice Dissipation@ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
SYMBOL
VCEO
VCER
VCBO
VEBO
IC
PD
PD
Tj, Tstg
Rth(j-a)
Rth(j-c)
VALUE
80
100
120
7.0
0.5
0.8
4.57
3.0
17.2
-65 to +200
219
58.3
UNITS
V
V
V
V
A
W
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
BVCER(sus) IC=100mA,RBE =10â¦
Collector Emitter Sustaining Voltage
BVCEO(sus) * IC=10mA, IB=0
Collector Base Breakdown Voltage
BVCBO IC=100µA, IE=0
Emitter Base Breakdown Voltage
BVEBO IE =100µA, IC=0
Collector Cutoff Current
ICBO
VCB=90V, IE=0
VCB=90V, IE=0,TA=150ºC
Emitter Cutoff Current
IEBO
VEB=5V,IC=0
DC Current Gain
hFE*
IC=1mA,VCE=10V
IC=10mA,VCE=10V
IC=10mA,VCE=10V
TC=-55ºC
IC=150mA,VCE=10V
Collector Emitter (Sat) Voltage
VCE(Sat) IC=50mA,IB=5.0mA
IC=150mA,IB=15mA
Base Emitter (Sat) Voltage
VBE(Sat)
IC=50mA,IB=5.0mA
IC=150mA,IB=15mA
MIN MAX UNITS
100
V
80
V
120
V
7.0
V
10
nA
15
µA
10
nA
20
35
20
40
120
1.2
V
5.0
V
0.9
V
1.3
Continental Device India Limited
Data Sheet
Page 1 of 4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese