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2N1711 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N1711
TO-39
Metal Can Package
General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage, RBE < 10Ω
Collector Base Voltage
Emitter Base Voltage
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCER
VCBO
VEBO
PD
PD
Tj, Tstg
VALUE
50
75
7.0
800
4.57
3.0
17.15
- 65 to +200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
VCER
IC=1mA, RBE <10 Ω
50
VCBO
IC=100µA, IE=0
75
VEBO
IE=100µA, IC=0
7.0
Collector Cut Off Current
ICBO
VCB=60V, IE=0
VCB=60V, IE=0, Ta=150ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
DC Current Gain
hFE
IC=0.01mA, VCE=10V
20
IC=0.1mA, VCE=10V
35
IC=10mA, VCE=10V
75
IC=10mA, VCE=10V, Ta= -55ºC
35
IC=150mA, VCE=10V
100
IC=500mA, VCE=10V
40
Collector Emitter Saturation Voltage *VCE (sat)
IC=150mA, IB=15mA
Base Emitter Saturation Voltage
*VBE (sat)
IC=150mA, IB=15mA
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Transition Frequency
fT
IC=50mA, VCE=10V, f=20MHz
70
Output Capacitance
Cob
VCB=10V, IE=0, f=100KHz
Input Capacitance
Cib
VEB=0.5V, IC=0, f=100KHz
Input Impedance
hib
IC=1mA, VCB=5V, f=1KHz
24
IC=5mA, VCB=10V, f=1KHz
4.0
Voltage Feedback Ratio
hrb
IC=1mA, VCB=5V, f=1KHz
IC=5mA, VCB=10V, f=1KHz
Small Signal Current Gain
hfe
IC=1mA, VCB=5V, f=1KHz
50
IC=5mA, VCB=10V, f=1KHz
70
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2N1711Rev_1 040406E
Continental Device India Limited
Data Sheet
UNIT
V
V
V
mW
mW/ ºC
W
mW/ ºC
ºC
TYP MAX UNIT
V
V
V
10
nA
10
µA
5.0
nA
300
0.5
V
1.3
V
TYP MAX
25
80
34
8.0
5.0
5.0
200
300
UNIT
MHz
pF
pF
Ω
Ω
x10-4
x10-4
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