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| 2N1613 Datasheet, PDF (1/4 Pages) NXP Semiconductors – NPN medium power transistor | |||
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N1613
TO-39
Metal Can Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage (RBE<10â¦) VCER
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation @ Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Tj, Tstg
Temperature Range
THERMAL RESISTANCE
Junction to Ambient
Rth(j-a)
Junction to Case
Rth(j-c)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Breakdown Voltage VCER(sus)* IC=100mA,RBE <10â¦
Collector Base Breakdown Voltage
BVCBO IC=100µA, IE=0
Emitter Base Breakdown Voltage
BVEBO IE =100µA, IC=0
Collector Leakage Current
ICBO VCB=60V, IE=0
VCB=60V, IE=0,TA=150ºC
Emitter Leakage Current
IEBO VEB=5V,IC=0
Collector Emitter Saturation Voltage VCE(Sat) * IC=150mA,IB=15mA
Base Emitter Saturation Voltage
VBE(Sat) * IC=150mA,IB=15mA
DC Current Gain
hFE* IC=0.1mA,VCE=10V
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=500mA,VCE=10V
IC=10mA,VCE=10V
Ta=-55ºC
VALUE
50
75
7.0
500
800
4.57
3
17.15
-65 to +200
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
218.7
58.3
ºC/W
ºC/W
MIN TYP MAX UNITS
50
V
75
V
7
V
10
nA
10
µA
10
nA
0.3
1.5
V
0.78 1.3
V
20
35
35
50
40
80
120
20
30
20
Continental Device India Limited
Data Sheet
Page 1 of 4
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