1N914WS Datasheet, PDF (1/3 Pages) Continental Device India Limited – SILICON EPITAXIAL SWITCHING DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
1N914WS
SOD-323
PLASTIC PCAKAGE
Marking
1N914WS=WQ with cathode band
Small Signal Diode
ABSOLUTE MAXIMUM RATINGS ( T_a=25ºC)
DESCRIPTION
Repetitive Peak Reverse Voltage
Average Rectified Forward Current
Non Repetitive Peak Forward Surge Current
Pulse width=1s
Pulse width=1µs
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
I_{F (AV)}
I_FSM
P_tot
T_j
T_stg
THERMAL RESISTANCE
Junction to Ambient in free air
R_{th (j-a)}
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Breakdown Voltage
V_R
I_R=5µA
I_R=100µA
Forward Voltage
V_F
I_F=10mA
Reverse Current
I_R
V_R=20V
V_R=20V, T_j=150ºC
V_R=75V
DYNAMIC CHARACTERISTICS
Capacitance
Reverse Recovery Time
C_tot
V_R=0V, f=1MHz
t_rr
I_F= I_R=30mA, R_L=100Ω,
I_RR=3.0mA
1N914WS Rev170507E
VALUE
100
200
0.5
1.0
200
150
- 55 to +150
312
MIN
MAX
75
100
1.0
25
50
5.0
4.0
50
UNIT
V
mA
A
A
mW
ºC
ºC
ºC/W
UNIT
V
V
V
nA
µA
µA
pF
ns
Continental Device India Limited
Data Sheet
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