1N914 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE
IN914, B
IN916
250mW
DO- 35
Glass Axial Package
FEATURES
Intended for General Purpose Application.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Reverses Voltage ( Continuous)
Repetitive Peak Reverse Voltage
Average Forward Current
V_R
V_RRM
T_A =25ºC
T_A =150ºC
Forward Current (D.C.)
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current
I_{F (AV)}
I_{F (AV)}
I_F
I_FRM
tp=1sec
Power Dissipation
Storage Temperature
Operating ambient Temperature
I_FSM
P_tot
T_stg
T_amb
VALUE
75
100
75
10
75
225
500
250
-65 to +200
-65 to +175
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Forward Voltage
V_F
IN914/916
I_F=10
1N914B
I_F=100mA,
I_F=5mA,
0.62
Reverse Breakdown Voltage
Reverse Current
V_(BR)R I_R=100µA
100
I_R
V_R= 20V
V_R= 75V
V_R= 20V, T_j=150ºC
TYP MAX
1.0
1.0
0.72
25
5
UNIT
V
V
mA
mA
mA
mA
mA
mW
ºC
ºC
UNIT
V
V
V
V
nΑ
µA
Diode Capacitance
Reverse Recovery Time
C_d V_R=0, f=1MHz
t_rr
I_F=10mA to I_R=10mA
R_L=100 Ω
Measured at I_R=1mA
I_F=10mA to I_R=60mA
R_L=100 Ω
Measured at I_R=1mA
2.5
pF
8
ns
4
ns
1N914_B_6 Rev031001
Continental Device India Limited
Data Sheet
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