1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL HIGH SPEED DIODE
1N4151
500mW
DO- 35
Glass Axial Package
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Reverses Voltage ( Continuous)
Repetitive Peak Reversse Voltage
Total Power Dissipation @ T_A=25ºC
Linear Derating Factor
V_R
V_RRM
P_tot
Storage Temperature
T_stg
Junction Temperature
T_j
VALUE
50
75
500
2.85
-65 to +200
200
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Forward Voltage
Reverse Current
V_F I_F=50mA,
I_R
V_R= 50V
V_R =50V, T_j=150ºC
Breakdown Voltage
Reverse Recovery Time
B_V I_R=5.0µA
75
t_rr
I_F=10mA to I_R=10mA
Recovery to 1.0mA
TYP MAX
1.0
0.05
50
4
Capacitance
I_F=10mA, V_R=-6.0V
2
R_L=100 Ω
C
V_R=0, f=1.0MHz
4
UNIT
V
V
mW
mW/ºC
ºC
ºC
UNIT
V
µΑ
µΑ
V
ns
ns
pF
1N4150Rev011001
Continental Device India Limited
Data Sheet
Page 1 of 3