1N4148W Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
1N4148W
SOD-123
PLASTIC PCAKAGE
1N4148W= A2 with cathode band
Fast Switching Diode
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Average recified Current half wave rectification
with resistive load f >50 Hz
Surge Forward Current t < 1s and T_j=25ºC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_R
V_RRM
*I_{F (AV)}
I_FSM
*P_tot
T_j
T_stg
VALUE
75
100
150
500
400
150
- 65 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
*R_{th (j-a)}
450
*Valid provided that electrodes are kept at ambient Temperature
ELECTRICAL CHARACTERISTICS (T_amb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
V_F
I_F=10mA
Reverse Current
I_R
V_R=20V
V_R=20V, T_j=150ºC
V_R=75V
MIN
MAX
1.0
25
50
5.0
DYNAMIC CHARACTERISTICS
Diode Capacitance
Voltage Rise When Switching On
(tested with 50ms pulses)
Reverse Recovery Time
Rectification Efficiency
C_d
V_R=0V, f=1MHz
4.0
tested with=50mA pulses,
V_fr
t_p=0.1µs, rise time=<30 ns, t_p= (5
2.5
to 100) KHz
t_rr
I_F=10mA, to I_R=1mA,
R_L=100 Ω, at V_R=6V
4.0
ηv
f=100MHz, V_RF=2V
0.45
1N4148W Rev020905E
UNIT
V
V
mA
mA
mW
ºC
ºC
ºC/W
UNIT
V
nA
µA
µA
pF
ns
ns
Continental Device India Limited
Data Sheet
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