1N4148M Datasheet, PDF (1/3 Pages) Semtech Corporation – SILICON EPITAXIAL PLANAR DIODE

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL PLANAR DIODE
1N4148M
DO-34
Glass Package
Fast Switching Diode
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Reverse Voltage
Peak Reverse Voltage
SYMBOL
V_R
V_RM
Rectified Current (Average) Half Wave
Rectification with Resist. Load at T_amb=25 ºC and *I_O
f > 50Hz
Surge Forward Current at t <1s and T_j=25ºC
Power Dissipation at T_amb=25ºC
Junction Temperature
Storage Temperature Range
I_FSM
*p_tot
T_j
T_stg
VALUE
50
60
130
500
400
200
- 65 to +200
*Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
Forward Voltage
V_F
I_F=100mA
Leakage Current
I_R
V_R=50V
Reverse Breakdown Voltage
V_(BR)R
I_R=100µA
60
Diode Capacitance
C_tot
V_R=0
Reverse Recovery Time
When Switched from
t_rr
I_F=10mA to I_R=1mA,
V_R=6V, R_L=100Ω,
UNIT
V
V
mA
mA
mW
ºC
ºC
MAX
1.1
0.5
3.0
UNIT
V
µA
V
pF
4.0
ns
1N4148M Rev090606E
Continental Device India Limited
Data Sheet
Page 1 of 3