1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON SWITCHING DIODE
1N4148, 1N4448
DO- 35
Glass Axial Package
General purpose ,Industrial, Military and space applications. Hermetically sealed glass with a stud
on either side of the glass passivated chip provides excellent stability. Extremely low leakage &
very high reliability
ABSOLUTE MAXIMUM RATINGS (T_a=25ºC)
DESCRIPTION
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Average Forward Current
Forward Current (DC)
Repetitive Peak Forward Current
Non Repetitive Peak Surge Current
tp= 1µs
tp= 1sec
Power Dissipation
Derating Factor
Operating and Storage Junction Temperature
Range
SYMBOL
V_RRM
V_R
I_{F (AV)}
I_F
I_FRM
I_FSM
I_FSM
P_TA
T_j, T_stg
VALUE
100
75
150
200
450
2000
500
500
2.85
- 65 to +200
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
V_F
I_F=5mA 1N4448
I_F=10mA 1N4148
I_F=100mA 1N4448
Reverse Current
I_R
V_R=20V
V_R=75V
V_R=20V, T_j=150ºC
V_R=75V, T_j=150ºC
Reverse Breakdown Voltage
V_BR
I_R=100µA
I_R=5µA
DYNAMIC CHARACTERISTICS
Diode Capacitance
Forward Recovery Voltage
Reverse Recovery Time
C_d
V_R=0V, f=1MHz
V_fr
When Switched from I_F=50mA,
t_r=20ns
t_rr
I_F=10mA, to I_R=60mA,
R_L=100 Ω Measured at I_R=1mA
MIN
0.62
100
75
MAX
0.72
1.0
1.0
25
5.0
50
100
4.0
2.5
4.0
UNIT
V
V
mA
mA
mA
mA
mA
mW
mW/ ºC
ºC
UNIT
V
V
V
nA
µA
µA
µA
V
V
pF
V
ns
Continental Device India Limited
Data Sheet
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