BZV55C2V4 Datasheet, PDF (1/1 Pages) Compensated Deuices Incorporated – ZENER DIODES

• ZENER DIODES
•LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
BZV55 C2V4
thru
BZV55 C75
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Derating: 3.33 mW / °C above +50°C
Forward Voltage: @ 200mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
TYPE
BZV55 C2V4
BZV55 C2V7
BZV55 C3V0
BZV55 C3V3
BZV55 C3V6
BZV55 C3V9
BZV55 C4V3
BZV55 C4V7
BZV55 C5V1
BZV55 C5V6
BZV55 C6V2
BZV55 C6V8
BZV55 C7V5
BZV55 C8V2
BZV55 C9V1
BZV55 C10
BZV55 C11
BZV55 C12
BZV55 C13
BZV55 C15
BZV55 C16
BZV55 C18
BZV55 C20
BZV55 C22
BZV55 C24
BZV55 C27
BZV55 C30
BZV55 C33
BZV55 C36
BZV55 C39
BZV55 C43
BZV55 C47
BZV55 C51
BZV55 C56
BZV55 C62
BZV55 C68
BZV55 C75
ZENER VOLTAGE
(NOTE 1)
VZ @ I _ZT
VOLTS
mA
MIN MAX
2.2
2.6
5
2.5
2.9
5
2.8
3.2
5
3.1
3.5
5
3.4
3.8
5
3.7
4.1
5
4.0
4.6
5
4.4
5.0
5
4.8
5.4
5
5.2
6.0
5
5.8
6.6
5
6.4
7.2
5
7.0
7.9
5
7.7
8.7
5
8.5
9.6
5
9.4
10.6
5
10.4
11.6
5
11.4
12.7
5
12.4
14.1
5
13.8
15.6
5
15.3
17.1
5
16.8
19.1
5
18.8
21.2
5
20.8
23.3
5
22.8
25.6
5
25.1
28.9
2
28.0
32.0
2
31.0
35.0
2
34.0
38.0
2
37.0
41.0
2
40.0
46.0
2
44.0
50.0
2
48.0
54.0
2
52.0
60.0
2
58.0
66.0
2
64.0
72.0
2
70.0
79.0
2
MAXIMUM
DIFFERENTIAL
RESISTANCE
rdiff @ I _Z
OHMS
mA
100
5
100
5
95
5
95
5
90
5
90
5
90
5
80
5
60
5
40
5
10
5
15
5
15
5
15
5
15
5
20
5
20
5
25
5
30
5
30
5
40
5
45
5
55
5
55
5
70
5
80
2
80
2
80
2
90
2
130
2
150
2
170
2
180
2
200
2
215
2
240
2
255
2
MAXIMUM
REVERSE
CURRENT
IR @ VR
µA
VOLTS
50
1
20
1
10
1
5
1
5
1
3
1
3
1
3
2
2
2
1
2
3
4
2
4
1
5
.700
5
.500
6
.200
7
.100
8
.100
8
.100
8
.050
10.5
.050
11.2
.050
12.6
.050
14.0
.050
15.4
.050
16.8
.050
18.9
.050
21.0
.050
23.1
.050
25.2
.050
27.3
.050
30.1
.050
32.9
.050
35.7
.050
39.2
.050
43.4
.050
47.6
.050
52.2
NOTE 1 Nominal Zener voltage is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S
0.03 MIN. .001 MIN.
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 ˚C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 35
˚C/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
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