1N645-1 Datasheet, PDF (1/2 Pages) Compensated Deuices Incorporated – SILICON RECTIFIER

• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25°C
150 mA @ 150°C
Derating: 2.0 mA/°C From 25°C to 150°C
6.0 mA/°C From 150°C to 175°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
1N645-1
VRSM
V (pk)
270
V _RWM
V (pk)
225
I _FSM
TP = 1/120 s
TA = 25°C
A
5
VF
@400mA
V _DC
0.8 - 1.0
CAP @
V _{R = 4V}
pF
20
TYPE
1N645-1
I _{R1 at} V _RWM I _{R2 at} V _RWM I _{R3 at} V _RSM
TA = 25°C
TA = 150°C
TA = 25°C
µA
µA
µA
0.05
25
50
1N645-1
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
250 ˚C/W maximum
THERMAL IMPEDANCE:
˚C/W maximum
(Z_OJX):
35
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
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