1N5194UR Datasheet, PDF (1/2 Pages) Compensated Deuices Incorporated – GENERAL PURPOSE SILICON DIODES

• AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25ºC to 150ºC
1.0mA/°C from 150ºC to 175ºC
Forward Current: 650mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
VRM
V(pk)
80
180
250
VRWM
V(pk)
70
180
225
IO
IO
I _FSM
TA = +150°C TP=1/120 S
TA=25ºC
mA
mA
A
200
50
2
200
50
2
200
50
2
TYPE
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
VF
@100mA
V dc
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
IR1 at VRWM IR2 at VRM IR3 at VRWM
TA=25ºC
TA = 150°C
nA dc
µA
µA dc
25
100
5
25
100
5
25
100
5
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S
0.03 MIN. .001 MIN.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 ˚C/W maximum
THERMAL IMPEDANCE: (ZOJX): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE [phone]
FAX [phone]
WEBSITE: http://www.cdi-diodes.com E-mail: [e-mail]