1N4148 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed diodes

• 1N4148-1 AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/116
• SWITCHING DIODE
• HERMETICALLY SEALED
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS
Operating Temperature: -65°C to +200°C
Storage Temperature: -65°C to +200°C
Operating Current: 200 mA @ TA = +25°C
Derating Factor: 1.14 mA/°C Above TA = + 25°C
Surge Current A: 2A, sine wave, Pw = 8.3ms
Surge Current B: 1.41A, square wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
VBR
@100µA
V _RWM
Vf ₁
Vf ₂
t _rr
I0
@I F ^{= 10 mA} @I F ^{= 100 mA}
Volts
Volts (pk)
mA
100
75
200
V dc
0.8
V dc
1.2
n sec
5
I _R1
@ 20 V dc
nA
25
I _R2
@ 75 V dc
µA
0.5
I _R3
@ 20 V
TA = 150°C
µA
35
I _R4
@ 75 V
TA = 150°C
µA
75
CAPACITANCE CAPACITANCE
@0V
@ 1.5 V
pF
pF
4.0
2.8
1N4148-1
FIGURE 1
DESIGN DATA
CASE: Hermetically sealed
glass case per MIL-S-19500/116
D0-35 outline
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJL):
250 ˚C/W maximum at L = .375
THERMAL IMPEDANCE: (ZOJX): 70
˚C/W maximum
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
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