CAT5127_0708 Datasheet, PDF (4/13 Pages) Catalyst Semiconductor – 32-Tap Digitally Programmable Potentiometer (DPP™)

CAT5127, CAT5129
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Parameters
Supply Voltage
V_CC to GND
Inputs
C¯¯S to GND
I¯N¯C¯ to GND
U/D¯ to GND
H to GND
L to GND
W to GND
Ratings
-0.5 to +7V
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
-0.5 to V_CC +0.5
Units
V
V
V
V
V
V
V
Parameters
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10 sec max)
Ratings
0 to 70
-40 to +85
+150
-65 to 150
+300
Units
ºC
ºC
ºC
ºC
ºC
RELIABILITY CHARACTERISTICS
Symbol
V_ZAP(2)
I_LTH(2) ⁽³⁾
T_DR
N_END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
Min
Typ
2000
100
100
1,000,000
Max Units
V
mA
Years
Stores
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to V_CC + 1V
(4) These parameters are periodically sampled and are not 100% tested.
Doc. No. MD-2127 Rev. C
4
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice