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CAT28C257 Datasheet, PDF (4/10 Pages) Catalyst Semiconductor – 256K-Bit CMOS PARALLEL E2PROM
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CAT28C257
Advanced
MODE SELECTION
Mode
CE
WE
OE
I/O
Power
Read
L
H
L
DOUT
ACTIVE
Byte Write (WE Controlled)
L
H
DIN
ACTIVE
Byte Write (CE Controlled)
L
H
DIN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
CI/O(1)
Input/Output Capacitance
CIN(1)
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
VI/O = 0V
VIN = 0V
A.C. CHARACTERISTICS, Read Cycle
VCC=5V + 10%, Unless otherwise specified
Symbol
tRC
tCE
tAA
tOE
tLZ(1)
tOLZ(1)
tHZ(1)(2)
tOHZ(1)(2)
tOH(1)
28C257-90
Parameter
Min. Max.
Read Cycle Time
90
CE Access Time
90
Address Access Time
90
OE Access Time
40
CE Low to Active Output
0
OE Low to Active Output
0
CE High to High-Z Output
40
OE High to High-Z Output
40
Output Hold from Address Change 0
28C257-12
Min. Max
120
120
120
50
0
0
50
50
0
28C257-15
Min. Max.
150
150
150
70
0
0
50
50
0
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Power-Up Timing
Symbol
tPUR
tPUW
Parameter
Power-Up to Read
Power-Up to Write
Min.
5
Max.
100
10
Units
µs
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Doc. No. 25073-00 2/98
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