CAT5116 Datasheet, PDF (3/8 Pages) Catalyst Semiconductor – Log-Taper, 100-Tap Digitally Programmable Potentiometer

CAT5116
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
V_CC to GND ....................................... -0.5V to +7V
Inputs
CS to GND ........................ -0.5V to VCC to +0.5V
INC to GND ....................... -0.5V to VCC to +0.5V
U/D to GND ....................... -0.5V to VCC to +0.5V
RH to GND ......................... -0.5V to VCC to +0.5V
R_L to GND ......................... -0.5V to VCC to +0.5V
R_W to GND ........................ -0.5V to VCC to +0.5V
Operating Ambient Temperature ........ -40°C to +85°C
Junction Temperature (10 secs) ..................... +150°C
Storage Temperature ...................................... +150°C
Lead Soltering (10 sec max) ........................... +300°C
*Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Absolute Maximum
Ratings are limited values applied individually while other param-
eters are within specified operating conditions, and functional
operation at any of these conditions is NOT implied. Device
performance and reliability may be impaired by exposure to
absolute rating conditions for extended periods of time.
RELIABILITY CHARACTERISTICS
Symbol
V_ZAP(1)
I_LTH(1)(2)
T_DR
N_END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
Min
Typ
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
2000
100
100
1,000,000
Max
Units
Volts
mA
Years
Stores
DC ELECTRICAL CHARACTERISTICS: V_CC = 2.5V to 5.5V unless otherwise specified.
Power Supply
Symbol Parameter
Conditions
Min Typ Max
V_CC
Operating Voltage Range
2.5
5.5
I_CC1(3)
Supply Current (Increment)
V_CC = 5.5V, f = 1MHz, I_W=0
100
V_CC = 5.5V, f = 250kHz, I_W=0
50
I_CC2
Supply Current (Write)
Programming, V_CC = 5.5V
1
V_CC = 3V
500
ISB₁
Supply Current (Standby)
CS=V_CC-0.3V
U/D, INC=V_CC-0.3V or GND
0.01
1
Units
V
µA
mA
µA
µA
Logic Inputs
Symbol Parameter
Conditions
Min
Typ
I_IH
Input Leakage Current
V_IN = V_CC
I_IL
Input Leakage Current
V_IN = 0V
V_IH1
TTL High Level Input Voltage
4.5V ≤ V_CC ≤ 5.5V
V_IL1
TTL Low Level Input Voltage
V_IH2
CMOS High Level Input Voltage
2.5V ≤ V_CC ≤ 5.5V
V_IL2
CMOS Low Level Input Voltage
2
0
V_CC x 0.7
-0.3
NOTES: (1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V_CC + 1V
(3) I_W=source or sink
Max
10
-10
V_CC
0.8
V_CC + 0.3
V_CC x 0.2
Units
µA
µA
V
V
V
V
3
Doc. No. 2118, Rev. J