CAT5113 Datasheet, PDF (3/9 Pages) Catalyst Semiconductor – 100-Tap Digitally Programmable Potentiometer

CAT5113
OPERATION MODES
INC
High to Low
High to Low
High
Low
X
CS
Low
Low
Low to High
Low to High
High
U/D
High
Low
X
X
X
Operation
Wiper toward H
Wiper toward L
Store Wiper Position
No Store, Return to Standby
Standby
R_H
C_H
R_wi
R_WB
C_W
C_L
R_L
Potentiometer
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS
Supply Voltage
V_CC to GND ...................................... –0.5V to +7V
Inputs
CS to GND .............................–0.5V to V_CC +0.5V
INC to GND ............................–0.5V to V_CC +0.5V
U/D to GND ............................–0.5V to V_CC +0.5V
H to GND ................................–0.5V to V_CC +0.5V
L to GND ................................–0.5V to V_CC +0.5V
W to GND ............................... –0.5V to V_CC +0.5V
RELIABILITY CHARACTERISTICS
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix) ...... 0°C to +70°C
Industrial (‘I’ suffix) ...................... – 40°C to +85°C
Junction Temperature ..................................... +150°C
Storage Temperature ....................... –65°C to +150°C
Lead Soldering (10 sec max) .......................... +300°C
* Stresses above those listed under Absolute Maximum Ratings may
cause permanent damage to the device. Absolute Maximum Ratings
are limited values applied individually while other parameters are
within specified operating conditions, and functional operation at any
of these conditions is NOT implied. Device performance and reliability
may be impaired by exposure to absolute rating conditions for extended
periods of time.
Symbol
V_ZAP(1)
I_LTH(1)(2)
T_DR
N_END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
Min
Typ
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
2000
100
100
1,000,000
Max
Units
Volts
mA
Years
Stores
DC Electrical Characteristics: V_CC = +2.5V to +6.0V unless otherwise specified
Power Supply
Symbol Parameter
Conditions
Min
V_CC
Operating Voltage Range
2.5
I_CC1
Supply Current (Increment)
V_CC = 6V, f = 1MHz, I_W=0
V_CC = 6V, f = 250kHz, I_W=0
I_CC2
Supply Current (Write)
Programming, V_CC = 6V
V_CC = 3V
ISB₁ ⁽²⁾
Supply Current (Standby)
CS=V_CC-0.3V
U/D, INC=V_CC-0.3V or GND
Typ
0.01
Max
6.0
100
50
1
500
1
Units
V
µA
mA
µA
µA
Logic Inputs
Symbol Parameter
I_IH
Input Leakage Current
I_IL
Input Leakage Current
V_IH1
TTL High Level Input Voltage
V_IL1
TTL Low Level Input Voltage
V_IH2
CMOS High Level Input Voltage
V_IL2
CMOS Low Level Input Voltage
Conditions
V_IN = V_CC
V_IN = 0V
4.5V ≤ V_CC ≤ 5.5V
2.5V ≤ V_CC ≤ 6V
Min
Typ
2
0
V_CC x 0.7
-0.3
NOTES:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V_CC + 1V
(3) I_W=source or sink
(4) These parameters are periodically sampled and are not 100% tested.
Max
10
–10
V_CC
0.8
V_CC + 0.3
V_CC x 0.2
Units
µA
µA
V
V
V
V
3
Doc. No. 2009, Rev. R