CAT5111_07 Datasheet, PDF (3/11 Pages) Catalyst Semiconductor – 100-Tap Digitally Programmable Potentiometer (DPP™) with Buffered Wiper

CAT5111
OPERATION MODES
I¯N¯C¯
C¯¯S
High to Low
Low
High to Low
Low
High
Low to High
Low
Low to High
X
High
U/D¯
High
Low
X
X
X
Operation
Wiper toward R_H
Wiper toward R_L
Store Wiper Position
No Store, Return to Standby
Standby
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
R_H
C_H
R_WI
R_WB
C_W
C_L
Potentiometer
R_L
Equivalent Circuit
Parameters
Supply Voltage
V_CC to GND
Inputs
C¯¯S to GND
I¯N¯C¯ to GND
U/D¯ to GND
R_H to GND
R_L to GND
R_WB to GND
Ratings
Units
-0.5 to +7V
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
-0.5 to V_CC +0.5
V
Parameters
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
Industrial (‘I’ suffix)
Junction Temperature
Storage Temperature
Lead Soldering (10s max)
Ratings
0 to 70
-40 to +85
+150
-65 to 150
+300
Units
ºC
ºC
ºC
ºC
ºC
RELIABILITY CHARACTERISTICS
Symbol
V_ZAP(2)
I_LTH(2) ⁽³⁾
T_DR
N_END
Parameter
ESD Susceptibility
Latch-Up
Data Retention
Endurance
Test Method
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
Min
Typ
2000
100
100
1,000,000
Max Units
V
mA
Years
Stores
DC ELECTRICAL CHARACTERISTICS
V_CC = +2.5V to +6V unless otherwise specified
Power Supply
Symbol Parameter
Conditions
Min
Typ
Max Units
V_CC Operating Voltage Range
2.5
I_CC1
Supply Current (Increment) ^{VCC = 6V, f = 1MHz, IW = 0}
V_CC = 6V, f = 250kHz, I_W = 0
–
–
I_CC2 Supply Current (Write)
Programming, V_CC = 6V
V_CC = 3V
–
–
I_SB1(3)
Supply Current (Standby)
C¯¯S = V_CC - 0.3V
U/D¯, I¯N¯C¯ = V_CC - 0.3V or GND
–
–
6
V
–
200
µA
–
100
µA
–
1000
µA
–
500
µA
75
150
µA
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to V_CC + 1V
(4) I_W = source or sink
(5) These parameters are periodically sampled and are not 100% tested.
© 2007 Catalyst Semiconductor, Inc.
3
Characteristics subject to change without notice
Doc. No. MD-2008 Rev. P