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CAT24WC66_06 Datasheet, PDF (2/13 Pages) Catalyst Semiconductor – 64K-bit I2C Serial EEPROM with Partial Array Write Protection
CAT24WC66
ABSOLUTE MAXIMUM RATINGS(1)
Parameters
Temperature Under Bias
Storage Temperature
Voltage on any Pin with Respect to Ground(2)
VCC with Respect to Ground
Package Power Dissipation Capability (TA = 25°C)
Lead Soldering Temperature (10 secs)
Output Short Circuit Current(3)
Ratings
–55 to +125
–65 to +150
–2.0 to VCC + 2.0
–2.0 to 7.0
1.0
300
100
Units
ºC
ºC
V
V
W
ºC
mA
REABILITY CHARACTERISTICS
Symbol
NEND(4)
TDR(4)
VZAP(4)
ILTH(4)(5)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-up
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
Min
1,000,000
100
2000
100
Max
Units
Cycles/Byte
Years
Volts
mA
D.C. OPERATING CHARACTERISTICS
VCC = 1.8V to 5.5V, unless otherwise specified.
Symbol Parameter
ICC
ISB(6)
ILI
Power Supply Current
Standby Current (VCC = 5V)
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL1
Output Low Voltage (VCC = +3.0V)
VOL2
Output Low Voltage(VCC = +1.8V)
Test Conditions
fSCL = 100kHz
VIN = GND or VCC
VIN = GND to VCC
VOUT = GND to VCC
IOL = 3.0 mA
IOL = 1.5 mA
Min Typ Max
3
1
10
10
-1
VCC x 0.7
VCC x 0.3
VCC + 0.5
0.4
0.5
Units
mA
µA
µA
µA
V
V
V
V
CAPACITANCE
TA = 25ºC, f = 1.0MHz, VCC = 5V
Symbol Parameter
CI/O(4)
CIN(4)
Input/Output Capacitance (SDA)
Input Capacitance (A0, A1, A2, SCL, WP)
Conditions
VI/O = 0V
VIN = 0V
Min Typ
Max Units
8
pF
6
pF
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) This parameter is tested initially and after a design or process change that affects the parameter.
(5) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(6) Maximum standby current (ISB) = 10µA for the Automotive and Extended Automotive temperature range.
Doc. No. 1037 Rev. J
2
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice