CAT28C65B Datasheet, PDF (1/11 Pages) Catalyst Semiconductor – 64K-Bit CMOS PARALLEL E2PROM

CAT28C65B
64K-Bit CMOS PARALLEL E²PROM
FEATURES
s Fast Read Access Times:
– 120/150ns
s Low Power CMOS Dissipation:
– Active: 25 mA Max.
– Standby: 100 µA Max.
s Simple Write Operation:
– On-Chip Address and Data Latches
– Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
– 5ms Max
s CMOS and TTL Compatible I/O
s Hardware and Software Write Protection
s Commercial, Industrial and Automotive
Temperature Ranges
s Automatic Page Write Operation:
– 1 to 32 Bytes in 5ms
– Page Load Timer
s End of Write Detection:
– Toggle Bit
– DATA Polling
– RDY/BUSY
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
DESCRIPTION
The CAT28C65B is a fast, low power, 5V-only CMOS
parallel E²PROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling, a RDY/BUSY pin and Toggle status bits
signal the start and end of the self-timed write cycle.
Additionally, the CAT28C65B features hardware and
software write protection.
The CAT28C65B is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC-
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
VCC
CE
OE
WE
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
TIMER
ADDR. BUFFER
& LATCHES
© 1999 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING,
TOGGLE BIT &
RDY/BUSY LOGIC
COLUMN
DECODER
1
8,192 x 8
E²PROM
ARRAY
32 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
5099 FHD F02
Doc. No. 25036-00 2/98 P-1