U421 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel Dual JFET

CORPORATION
U421 – U426
ABSOLUTE MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
Gate-to-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
Gate-Drain or Gate-Source Voltage . . . . . . . . . . . . . . . . -40V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Device(DDeirsastiepa3t.i2onm(WEa/c_ohCStoid1e5),0T_oAC)=.
25^oC
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400mW
Total D(DeveircaeteD6is.0sipmaWtio/n_o,CTtA_{o=15205ooCC) . . . . . . . . . . . . . 750 mW}
Storage Temperature Range . . . . . . . . . . . . . -65^oC to +150^oC
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SYMBOL
CHARACTERISTIC
STATIC
BVGSS
BVG1G2
IGSS
Gate-Source Breakdown Voltage
Gate-Gate Breakdown Voltage
Gate Reverse Current ⁽¹⁾
IG
Gate Operating Current ⁽¹⁾
VGS (off) Gate-Source Cutoff Voltage
VGS
Gate-Source Voltage
IDSS
Saturation Drain Current
DYNAMIC
gfs
Common-Source Forward Transconductance
gos
Common-Source Output Conductance
Ciss
Common-Source Input Capacitance
Crss
Common-Source Reverse Transfer Capacitance
gfs
Common-Source Forward Transconductance
gos
Common-Source Output Conductance
en
Equivalent Short Circuit Input
NF
Noise Figure
U421-3
U424-6
MIN TYP MAX MIN TYP MAX
-40 -60
-40 -60
±40
±40
1.0
1.0
.25
.250
-0.4
-2.0 -0.4
-1.8
60
1000 60
3.0
3.0
0.5
-500
-2.0
-2.9
1800
300
1500 300
1500
10
10
3.0
3.0
1.5
1.5
120
350 120
350
3.0
3.0
20 70
20 70
10
10
1.0
1.0
UNIT
TEST CONDITIONS
IG = -1µA, VDS = 0
V
IG = -1µA, ID = 0, IS = 0
pA
T = +25^oC _{VGS = -20V,}
nA
T = +125^oC ^{VDS = 0}
pA
T = +25^oC _{VDG = 10V,}
T = +125^oC ^{ID = 30µA}
VDS = 10V, ID = 1nA
V
VDG = 10V, ID = 30µA
µA
VDS = 10V, VGS = 0
f = 1 kHz
VDS = 10V,
VGS = 0
pF
f = 1MHz
f = 1kHz
nV/ Hz
dB
VDG = 10V,
ID = 30µA
f = 10Hz
f = 1kHz
f = 10 Hz
RG = 10 MΩ
SYMBOL
CHARACTERISTIC
MATCH
| VGS1-VGS2 | Differential Gate-Source Voltage
U421,4
U422,5
U423,6
UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
10
15
25 mV
| VGS1-VGS2 | Differential Gate-Source Voltage
∆T
Change with Temperature ⁽²⁾
10
25
40 V/ ^oC
CMRR
Common Mode Rejection Ratio ⁽³⁾ 90 95
80 90
80 90
dB
TEST CONDITIONS
VDG = 10V, ID = 30µA
VDG = 10V, ID = 30µA,
TA = -55^oC, TB = 25^oC,
TC = 125^oC
ID = 30µA, VDG = 10 to 20 V
NOTES:
1. Approximately doubles for every 10^oC increase in TA.
2. Measured at endpoints TA, TB and TC.
[ ] ^{3. CMRR = 20log10}
VDD
VGS1-VGS2
VDD = 10V.
4. Case lead not connected.