SST5912 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel JFET Monolithic Dual

CORPORATION
SST5912
ABSOLUTE MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
Parameter/Test Condition
Symbol
Gate-Drain Voltage
VGD
Gate-Source Voltage
VGS
Forward Gate Current
IG
Power Dissipation (per side)
PD
(total)
Power Derating (per side)
(total)
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Lead Temperature (1/16" from case for 10 seconds)
TL
Limit
-25
-25
50
300
500
2.4
4
-55 to 150
-65 to 150
300
Unit
V
V
mA
mW
mW
mW/ ^oC
mW/ ^oC
o_C
o_C
o_C
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise noted)
SYMBOL
STATIC
V(BR)GSS
VGS(OFF)
IDSS
IGSS
CHARACTERISTCS
Gate-Source Breakdown Voltage
Gate-Source Cut off Voltage
Saturation Drain Current ²
Gate Reverse Current
IG
Gate Operating Current
VGS
VGS(F)
DYNAMIC
Gate-Source Voltage
Gate-Source Forward Voltage
gfs
Common-Source Forward Transconductance
gos
Common-Source Output Conductance
gfs
Common-Source Forward Transconductance
gos
Common-Source Output Conductance
Ciss
Common-Source Input Capacitance
Crss
Common-Source Reverse Transfer Capacitance
en
Equivalent Input Noise Voltage
NF
Noise Figure
MATCHING
| VGS1 - VGS2 | Differential Gate Source Voltage
D | VGS1 - VGS2 | Gate Source Voltage Differential Change with
DT
Temperature
IDSS1
IDSS2
gfs1
gfs2
| IG1 - IG2 |
CMRR
Saturation Drain Current Ratio
Transconductance Ratio
Differential Gate Current
Common Mode Rejection Ratio
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300ms, duty cycle â 3%.
TYP¹
-35
-3.5
15
-1
-0.2
-1
-0.2
-1.5
0.7
6
20
6
30
3.5
1
4
0.1
7
10
10
0.98
0.98
0.01
90
SST5912
UNIT
MIN MAX
TEST CONDITIONS
-25
-1 -5
IG = -1mA, VDS = 0V
V
VDS = 10V, ID = 1nA
7
40
mA VDS = 10V, VGS = 0V
-100 pA VGS = -15V, VDS = 0V
nA TA = 125^oC
-100 pA VDG = 10V, ID = 5mA
nA TA = 125^oC
-0.3 -4
VDG = 10V, ID = 5mA
V
IG = 1mA, VDS = 0V
5
10
mS _{VDG = 10V, ID = 5mA}
100 mS ^{f = 1kHz}
5
10
mS _{VDG = 10V, ID = 5mA}
150 mS ^{f = 100MHz}
5
1.2
pF
VDG = 10V, ID = 5mA
f = 1MHz
20 nV/ Hz VDG = 10V, ID = 5mA, f = 10kHz
1
dB VDG = 10V, ID = 5mA, f = 10kHz, RG = 100W
15
mV VDG = 10V, ID = 5mA
40
40
mV/ ^oC
T = -55 to 25^oC
T = 25 to 125^oC
VDG = 10V
ID = 5mA
0.95 1
VDS = 10V, VGS = 0V
0.95 1
20
VDG = 10V, ID = 5mA, f = 1kHz
nA VDG = 10V, ID = 5mA, TA = 125^oC
dB VDD = 5 to 10V, ID = 5mA