SD5501 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel Depletion-Mode 4-Channel DMOS FET Array

SD5501
LLC
ABSOLUTE MAXIMUM RATINGS (TA = +25^oC unless otherwise noted)
VDS Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . +30 Vdc
VSD Source-Drain Voltage. . . . . . . . . . . . . . . . . . . . +0.5 Vdc
VDB Drain-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +30 Vdc
VSB Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . +15 Vdc
VGS Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . +25 Vdc
VGB Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . . +25 Vdc
Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . -0.3 Vdc
VGD Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +25 Vdc
ID Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA
PD
Total Package Power Dissipation
(at or below TA = +25^oC) . . . . . . . . . . . . . . . . . 640 mW
Linear Derating Factor . . . . . . . . . . . . . . . . 10.7 mW/^oC
PD
Single Device Power Dissipation
(at or below TA = +25^oC) . . . . . . . . . . . . . . . . . 300 mW
Linear Derating Factor . . . . . . . . . . . . . . . . . 5.0 mW/^oC
Tj
TS
Operating Junction Temperature Range . . -55 to +85^oC
Storage Temperature Range . . . . . . . . . -55 to + 150^oC
ELECTRICAL CHARACTERISTCIS (TA = +25^oC unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
STATIC
BVDS
Drain-Source Breakdown Voltage
20
BVSD
Source-Drain Breakdown Voltage
10
BVDB
Drain-Body Breakdown Voltage
25
BVSB
Source-Body Breakdown Voltage
15
IGSS(fwd)
Forward Gate Leakage Current
IG
Gate Operating Current
VGS (off)
Gate - Source Cutoff Voltage
-1.0
VGS (on)
Gate-Source On Voltage
-0.3
7.0
IDSX
Zero Gate Voltage Drain Current
5.0
rDS (ON)
Drain-Source On Resistance
DYNAMIC
gfs
Common-Source Forward Transconductance ⁽¹⁾ 6.0
gos
Common-Source Output Conductance
Ciss
Common-Source Input Capacitance
Coss
Common-Source Output Capacitance
Crss
Common-Source Reverse Transfer Capacitance
C(gs + sb) Source Node Capacitance
MATCHING
VGSM
Gate Source Voltage Match
rDS(on)
Drain-Source On Resistance Match
IDXSM
gfsm
Zero Gate Voltage Drain Current Match
Transconductance Match ^{(1), (2)}
Note 1: Pulse Test, 80 sec, 1% Duty Cycle
Note 2: Match of 4 channels
TYP MAX
1.0
-3.0 -100
-0.7 -10
-5.0
-3.0
40
100 150
7.5
12
200 350
3.5
1.2
0.3
4.5
50
10%
10%
10%
UNITS
TEST CONDITIONS
V
nA
pA
nA
V
mA
ohms
ID = 10 nA, VGS = VBS = -5.6V
IS = 10 nA, VGD = VBD = -5.6V
ID = 10nA, VGB = 0, Source Open
IS = 10µA, VGB = 0, Drain Open
VGS = 25V, VDS = VBS = 0
VDG = 15V, ID = 5.0 mA,
VBS = -5.6V
TA = +125^oC
VDS = 10V, ID = 1.0µA, VBS = 5.6V
VDG = 10V, ID = 5mA, VSB = -5.6V
VDS = 10V, VGS = 0,
VBS = -5.6V
TA = +125^oC
ID = 1.0mA, VGS = 0, VBS = -5.6V
mS
µS
VDG = 10V
ID = 5.0mA
pF
VBS = -5.6V
f = 1 KHz
f = 1 MHz
mV VDG = 10V, ID = 5.0mA, VBS = -5.6V
ID = 1.0 mA, VGS = 0, VBS = 5.6V
VDG = 10V, ID = 5.0 mA,
VBS = -5.6V
f = 1 KHz
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS065 REV A