SD411 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel Enhancement Mode Dual DMOS FET

CORPORATION
SD411
ABSOLUTE MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
VDS Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +20V
PD
VSD Source-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +10V
VDB Drain-Body voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
PD
VSB Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +15V
VGD Gate-Drain Voltage. . . . . . . . . . . . . . . . . . . . . . . . +25V
Tj
VGS Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
VGB Gate-Body Voltage . . . . . . . . . . . . . . . . . . . . . . . . +25V
TS
VG1G2 Gate-to-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . +25V
TL
VD1D2 Drain-to-Drain Voltage . . . . . . . . . . . . . . . . . . . . . +20V
VS1S2 Source-to-Source Voltage . . . . . . . . . . . . . . . . . . +15V
ID Continuous Drain Current . . . . . . . . . . . . . . . . +50 mA
Device Dissipation (each side). . . . . . . . . . . . 360 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . 2.88 mW/^oC
Total Device Dissipation . . . . . . . . . . . . . . . . 500 mW
Derating Factor . . . . . . . . . . . . . . . . . . . . . . . 4 mW/^oC
Operating Junction
Temperature Range . . . . . . . . . . . . . . . . -55 to +125^oC
Storage Temperature Range . . . . . . . . . -55 to +150^oC
Lead Temperature (1/16’ from mounting
surface for 10 sec.). . . . . . . . . . . . . . . . . . . . . . +260^oC
ELECTRICAL CHARACTERISTICS(TA = +25^oC per side unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP MAX
STATIC
BVDS
Drain Source Breakdown Voltage
20
BVSD
Source-Drain Breakdown Voltage
10
BVDB
Drain-Body Breakdown Voltage
25
BVSB
IDSX
IGBS
VGS(th)
rDS(ON)
DYNAMIC
Source-Body Breakdown Voltage
Drain-Source Leakage Current
Gate-Body Leakage Current
Gate-Source Threshold Voltage
Drain-Source ON Resistance ⁽¹⁾
15
0.7
10
1.0
0.5
1.0
2.0
70
gfs
Common-Source Forward Transconductance⁽¹⁾
10
12
Ciss
Common-Source Input Capacitance
3.5
Coss
Common-Source Output Capacitance
1.2
Crss
Common Source Reverse Transfer Capacitance
0.3
C(gs + sb)
Source Node Capacitance
4.5
MATCH
| VGS1 - VGS2 | Differential Gate Source Voltage
25
∆| VGS1 - VDS2 | _{Differential Drift}
25
∆T
NOTE 1: Pulse Test, 80sec, 1% Duty Cycle
UNITS
TEST CONDITIONS
V
nA
µA
V
ohms
ID = 10 nA, VGS = VBS = -5V
IS = 10 nA, VGD = VBD = -5V
ID = 10 nA, VGB = 0 Source
Open
IS = 10µA, VGB = 0 Drain Open
VDS = 20V, VGS = VBS = -5V
VGS = 25V, VDB = VSB = 0
ID = 1.0µA, VDS = VGS, VSB = 0
ID = 1.0mA, VGS = 5.0V, VSB = 0
mS
VDS = 10V, ID = 20mA, VSB = 0
f = 1KHZ
pF
VDS = 10V, VGS = VBS = 0
f = 1MHZ
mV
µV/ ^oC
VDS = 10V
ID = 5.0mA
VSB = 0
TA = -55^oC to
+125C^o