SD211 Datasheet, PDF (2/2 Pages) Calogic, LLC – High-Speed Analo N-Channel DMOS FETs

SD211 / SD213 / SD215
CORPORATION
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25^oC Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65^oC to +200^oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300^oC
Operating Temperature Range . . . . . . . . . . . -55^oC to +125^oC
PARAMETER SD211 SD212 SD215 UNIT
VDS
Drain-to-Source +30
+10
+20
Vdc
VSD
Source-to-Drain +10
+10
+20
Vdc
VDB
Drain-to-Body
+30
+15
+25
Vdc
VSB
Source-to-Body +15
+15
+25
Vdc
VGS
Gate-to-Source
-15
+25
-15
+25
-25
+30
Vdc
VGB
Gate-to-Body
-0.3
+25
-0.3
+25
-0.3
+30
Vdc
VGD
Gate-to-Drain
-30
+25
-15
+25
-25
+30
Vdc
DC CHARACTERISTICS (TA = 25^oC, unless otherwise specified)
SYMBOL
PARAMETER
BREAKDOWN VOLTAGE
BVDS
Drain-to-Source
BVSD
Source-to Drain
BVDB
Drain-to-Body
BVSB
Source-to-Body
LEAKAGE CURRENT
IDS (OFF) Drain-to-Source
ISD (OFF) Source-to-Drain
IGBS
Gate
VT
Threshold Voltage
rDS (ON)
Drain-to-Source
Resistance
SD211
SD213
SD215
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
30 35
10 25
10
15
15
10 25
10
15
15
20 25
20
25
25
VGS = VBS = 0V, ID = 10µA
VGS = VBS = -5V, IS = 10nA
V _{VGD = VBD = -5V, ID = 10nA}
VGB = 0V, source OPEN, ID = 10nA
VGB = 0V, drain OPEN, IS = 10µA
1 10
1 10
VGS = VBS = -5V, VDS = +10V
1 10
1 10
1 10
VGS = VBS = -5V, VDS = +20V
nA _{VGS = VBD = -5V, VSD = +10V}
1 10
VGS = VBD = -5V, VSD = +20V
10
10
10
VDB = VSB = 0V, VGS = ±40V
0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS = VT, IS = 1µA, VSB = 0V
50 70
50 70
50 70
ID = 1.0mA, VSB = 0, VGS = +5V
30 45
23
30 45
23
30 45
23
ID = 1.0mA, VSB = 0, VGS = +10V
Ω _{ID = 1.0mA, VSB = 0, VGS = +15V}
19
19
19
ID = 1.0mA, VSB = 0, VGS = +20V
17
ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD211
SD213
SD215
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs
Forward
Transconductance
10
15
10 15
10 15
ms
SMALL SIGNAL CAPACITANCES
CISS
COSS
Gate Node
Drain Node
2.4 3.5
1.3 1.5
2.4 3.5
1.3 1.5
2.4 3.5
1.3 1.5 pF
CRSS
Source Node
0.3 0.5
0.3 0.5
0.3 0.5
TEST CONDITIONS
VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
VDS = 10V, f = 1MHz
VGS = VBS = -15V
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
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