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SD210DE_15 Datasheet, PDF (2/2 Pages) Calogic, LLC – High-Speed Analog N-Channel DMOS FETs
SD210 / SD212 / SD214
ABSOLUTE MAXIMUM RATINGS
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25oC Case Temperature . . . 1.2W
Storage Temperatue Range . . . . . . . . . . . . . -65oC to +200oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC
PARAMETER SD210 SD212 SD214 UNIT
VDS Drain-to-Source +30 +10 +20 Vdc
VSD Source-to-Drain +10 +10 +20 Vdc
VDB Drain-to-Body +30 +15 +25 Vdc
VSB Source-to-Body +15 +15 +25 Vdc
VGS Gate-to-Source ±40 ±40 ±40 Vdc
VGB Gate-to-Body
±40 ±40 ±40
Vdc
VGD Gate-to-Drain
±40
±40
±40
Vdc
DC CHARACTERISTICS (TA = 25oC, unless otherwise specified)
SYMBOL
PARAMETER
BREAKDOWN VOLTAGE
SD210
SD212
SD214
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
BVDS
Drain-to-Source
BVSD
Source-to Drain
BVDB
Drain-to-Body
BVSB
Source-to-Body
LEAKAGE CURRENT
30 35
10 25
10
15
15
10 25
10
15
15
20 25
20
25
25
VGS = VBS = 0V, ID = 10µA
VGS = VBS = -5V, IS = 10nA
V VGD = VBD = -5V, ID = 10nA
VGB = 0V, source OPEN, ID = 10nA
VGB = 0V, drain OPEN, IS = 10µA
IDS (OFF) Drain-to-Source
ISD (OFF) Source-to-Drain
1 10
1 10
1 10
1 10
VGS = VBS = -5V, VDS = +10V
1 10
VGS = VBS = -5V, VDS = +20V
nA VGS = VBD = -5V, VSD = +10V
1 10
VGS = VBD = -5V, VSD = +20V
IGBS
Gate
0.1
0.1
0.1
VDB = VSB = 0V, VGS = ±40V
VT
Threshold Voltage 0.5 1.0 2.0 0.1 1.0 2.0 0.1 1.0 2.0 V VDS = VGS = VT, IS = 1µA, VSB = 0V
rDS (ON)
Drain-to-Source
Resistance
50 70
30 45
23
19
17
50 70
30 45
23
19
17
50 70
30 45
23
19
17
ID = 1.0mA, VSB = 0, VGS = +5V
ID = 1.0mA, VSB = 0, VGS = +10V
Ω ID = 1.0mA, VSB = 0, VGS = +15V
ID = 1.0mA, VSB = 0, VGS = +20V
ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
SD210
SD212
SD214
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
gfs
Forward
Transconductance
10
15
10 15
10 15
ms
VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
C(GS+GD+GB) Gate Node
2.4 3.5
2.4 3.5
2.4 3.5
C(GD+DB)
C(GS+SB)
Drain Node
Source Node
1.3 1.5
3.5 5.5
1.3 1.5
3.5 5.5
1.3 1.5
3.5 5.5
pF
VDS = 10V, f = 1MHz
VGS = VBS = -15V
CDG
Reverse Transfer
0.3 0.5
0.3 0.5
0.3 0.5
Information furnished by Calogic is believed to be accurate and reliable. However, no responsibility is assumed for its use: nor for any infringement of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC LLC, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 DS056 REV A