SD2100 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel Depletion Mode Lateral DMOS FET

CORPORATION
SD2100 / SST2100
ABSOLUTE MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
SYMBOL
PARAMETERS/TEST CONDITIONS
VGS
Gate-Source Voltage
VDS
Drain-Source Voltage
ID
Drain Current
PD
Power Dissipation
Power Derating
TJ
Operating Junction Temperature
Tstg
Storage Temperature
TL
Lead Temperature (1/16" from case for 10 sec.)
LIMITS
±25
25
50
300
2.4
-55 to 150
-55 to 150
300
UNITS
V
mA
mW
mW/^oC
o_C
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise noted)
SYMBOL
PARAMETER
TYP¹
MIN
MAX
STATIC
V(BR)DS
Drain-Source Breakdown Voltage
25
15
IGSS
Gate Reverse Current
±0.05
±1
IDSS
Saturation Drain Current
7
0.5
10
VGS(OFF)
Gate-Source Cutoff
-1.5
-2
VGS
Gate-Source Voltage
-0.3
-1
1
0.4
0
1.5
120
200
rDS(ON)
Drain-Source On-Resistance
40
50
DYNAMIC
gfs
Forward Transconductance
8000
1000
gos
Output Conductance
250
500
gfs
Forward Transconductance
10000
7000
gos
Output Conductance
350
500
Ciss
Common-Source Input Capacitance
5
6
Crss
Reverse Transfer Capacitance
1
2
SWITCHING
td(ON)
0.7
Turn-ON Time
tr
0.4
tOFF
Turn-OFF Time
5
Note1: For design aid only, not subject to production testing.
UNIT
TEST CONDITIONS
V
VGS = VBS = -5V, ID = 1µA
nA
VGS = ±25V, VDS = VBS = 0V
mA
VDS = 10V, VGS = VBS = 0V
VDS = 10V, ID = 1µA, VBS = 0V
V
VDG = 10V
VBS = 0V
ID = 5mA
ID = 10mA
Ω
ID = 100µA
VBS = 0V
VGS = 0V
VGS = 5V
VDS = 10V, VGS = VBS = 0V, f = 1kHz
µS
VDG = 10V, VBS = 0V, ID = 10mA, f = 1kHz
pF
VDS = 10V, f = 1MHz, VGS = VBS = -5V
ns
VDD = 5V, RL = 680Ω, VIN = -4V to -2V