J308 Datasheet, PDF (2/2 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

J308 – J310 / SST308 – SST310
CORPORATION
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise specified)
SYMBOL
PARAMETER
308
309
310
UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BVGSS
Gate-Source Breakdown
Voltage
-25
-25
-25
V IG = -1µA, VDS = 0
IGSS
Gate Reverse Current
VGS(off)
Gate-Source
Cutoff Voltage
-1.0
IDSS
Saturation Drain Current
(Note 1)
12
-1.0
-1.0
-6.5 -1.0
60 12
-1.0
-1.0
-4.0 -2.0
30 24
-1.0 nA VGS = -15V,
-1.0 µA VDS = 0
TA = 125^o
-6.5 V VDS = 10V, ID = 1nA
60 mA VDS = 10V, VGS = 0
VGS(f)
Gate-Source
Forward Voltage
1.0
1.0
1.0
V VDS = 0, IG = 1mA
gfs
Common-Source Forward
Transconductance
8,000 17,000
10,000 17,000
8,000 17,000
gos
Common-Source Output
Conductance
gfg
Common-Gate Forward
Transconductance
gog
Common Gate Output
Conductance
250
13,000
150
250
13,000
150
250
12,000
VDS = 10V
µS ID = 10mA f = 1kHz
(Note 2)
150
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25^oC unless otherwise specified)
SYMBOL
Cgd
Cgs
en
PARAMETER
Gate-Drain Capacitance
Gate-Source Capacitance
Equivalent Short-Circuit
Input Noise Voltage
308
309
310
UNITS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
TEST CONDITIONS
1.8 2.5
4.3 5.0
1.8 2.5
4.3 5.0
1.8 2.5
4.3 5.0
pF
VDS = 10V,
VGS = -10
f = 1MHz
(Note 2)
10
10
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f = 100Hz
(Note 2)
Re(Vfs)
Common-Source Forward
Transconductance
12
Re(Vfg)
Common-Gate Input
Conductance
14
Re(Vis)
Common-Source Input
Conductance
0.4
Re(Vos)
Common-Source Output
Conductance
0.15
Gpg
Common-Gate Power Gain
at Noise Match
16
NF
Noise Figure
1.5
Gpg
Common-Gate Power Gain
at Noise Match
11
NF
Noise Figure
2.7
NOTES: 1. Pulse test PW 300µs, duty cycle ≤3%.
2. For design reference only, not 100% tested.
12
14
0.4
0.15
16
1.5
11
2.7
12
14
0.4
0.15
µS
VDS = 10V,
ID = 10mA
(Note 2)
f = 105MHz
16
1.5
dB
11
2.7
f = 450MHz