J270 Datasheet, PDF (2/2 Pages) Calogic, LLC – P-Channel JFET

CORPORATION
J270 – J271 / SST270 – SST271
ABSOLUTE MAXIMUM RATINGS (TA = 25^oC unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Drain Voltage
VGD
Gate-Source Voltage
VGS
Gate Current
IG
Power Dissipation
PD
Power Derating
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Lead Temperature (1/16" from case for 10 seconds)
TL
LIMIT
30
30
-50
350
2.8
-55 to 150
-55 to 150
300
UNIT
V
V
mA
mW
mW/ ^oC
o_C
o_C
o_C
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise noted)
SYMBOL
PARAMETER
TYP¹
270
271
MIN MAX MIN MAX
STATIC
V(BR)GSS
Gate-Source Breakdown Voltage
45
30
30
VGS(OFF)
IDSS
Gate-Source Cutoff Voltage
Saturation Drain Current ²
0.5 2.0 1.5 4.5
-2 -15 -6 -50
IGSS
Gate Reverse Current
10
200
200
5
IG
Gate Operating Current
10
VGS(F)
Gate-Source Forward Voltage
-0.7
DYNAMIC
gfs
Common-Source Forward
Transconductance
6 15 8 18
gos
Common-Source Output
Conductance
200
500
Ciss
Common-Source Input Capacitance
20
Crss
Common-Source Reverse
Transfer Capacitance
4
en
Equivalent Input Noise Voltage
20
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300µs, duty cycle ≤ 3%.
UNIT
V
mA
pA
nA
pA
V
mS
µS
pF
nV
√Hz
TEST CONDITIONS
IG = 1µA, VDS = 0V
VDS = -15V, ID = -1nA
VDS = -15V, VGS = 0V
VGS = 20V, VDS = 0V
TA = 125^oC
VDG = -15V, ID = -1mA
IG = -1mA, VDS = 0V
VDS = -15V, VGS = 0V
f = 1kHz
VDS = -15V, VGS = 0V
f = 1MHz
VDS = -10V, VGS = 0V
f = 1kHz