3N190 Datasheet, PDF (2/2 Pages) Calogic, LLC – Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

CORPORATION
3N190 / 3N191
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25^oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
gfs
Forward Transconductance (Note 3)
Yos
Output Admittance
Ciss
Input Capacitance Output Shorted (Note 5)
Crss
Reverse Transfer Capacitance (Note 5)
Coss
Output Capacitance Input Shorted (Note 5)
3N190/91
UNITS
MIN MAX
1500 4000
µS
300
4.5
1.0 pF
3.0
TEST CONDITIONS
VDS = -15V, ID = -10mA
f = 1kHz
f = 1MHz
SWITCHING CHARACTERISTICS (TA = 25^oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
td(on)
tr
Turn On Delay Time
Rise Time
15
30
ns VDD = -15V, ID = -10mA, RG = RL = 1.4kΩ (Note 5)
toff
Turn Off Time
50
MATCHING CHARACTERISTICS (TA = 25^oC and VBS = 0 unless otherwise specified) 3N188 and 3N190
SYMBOL
Yfs1 / Yfs2
VGS1-2
∆VGS1−2
∆T
∆VGS1−2
∆T
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
Gate Source Threshold Voltage Differential
Change with Temperature (Note 4)
MIN
0.85
MAX
1.0
100
100
100
UNITS
mV
µV/ ^oC
µV/ ^oC
TEST CONDITIONS
VDS = -15V, ID = -500µA, f = 1kHz
VDS = -15V, ID = -500µA
VDS = -15V, ID = -500µA,
T = -55^oC to +25^oC
VDS = -15V, ID = -500µA
T = +25^oC to +125^oC
NOTES: 1. Per transistor.
2. Approximately doubles for every 10^oC increase in TA.
3. Pulse test duration = 300µs; duty cycle ≤3%.
4. Measured at end points, TA and TB.
5. For design reference only, not 100% tested.