3N170_15 Datasheet, PDF (2/2 Pages) Calogic, LLC – N-Channel Enhancement

3N170 / 3N171
LLC
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise specified) Substrate connected to source.
SYMBOL
PARAMETER
BVDSS
Drain-Source Breakdown Voltage
IGSS
Gate Leakage Current
IDSS
Zero-Gate-Voltage Drain Current
VGS(th)
Gate-Source Threshold Voltage
3N170
3N171
MIN MAX
25
±10
100
10
1.0
1.0
2.0
1.5
3.0
UNITS
V
pA
nA
µA
TEST CONDITIONS
ID = 10µA, VGS = 0
VGS = ±35V, VDS = 0
VGS = 35V, VDS = 0, TA = 125^oC
VDS = 10V, VGS = 0
TA = 125^oC
V
VDS = 10V, ID = 10µA
ID(on)
VDS(on)
rds(on)
| Yfs |
Crss
Ciss
Cd(sub)
td(on)
tr
td(off)
tf
"ON" Drain Current
Drain-Source "ON" Voltage
Drain-Source ON Resistance
Forward Transfer Admittance
Reverse Transfer Capacitance (Note 1)
Input Capacitance (Note 1)
Drain-Substrate Capacitance (Note 1)
Turn-On Delay Time (Note 1)
Rise Time (Note 1)
Turn-Off Delay Time (Note 1)
Fall Time (Note 1)
10
2.0
200
1000
1.3
5.0
5.0
3.0
10
3.0
15
mA
VGS = 10V, VDS = 10V
V
ID = 10mA, VGS = 10V
Ω
VGS = 10V, ID = 0, f = 1kHz
µS
VDS = 10V, ID = 2.0mA, f = 1kHz
VDS = 0, VGS = 0, f = 1MHz
pF
VDS = 10V, VGS = 0, f = 1MHz
VD(SUB) = 10V, f = 1MHz
VDD = 10V, ID(on) = 10mA,
ns
VGS(on) = 10V, VGS(off) = 0,
RG = 50Ω
NOTE 1: For design reference only, not 100% tested.
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS019 REV A