3N165 Datasheet, PDF (2/2 Pages) Calogic, LLC – Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier

CORPORATION
3N165 / 3N166
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25^oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX UNITS
TEST CONDITIONS
gfs
Forward Transconductance
gos
Output Admittance
1500
3000
300
µS VDS = -15V, ID = -10mA, f = 1kHz
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
3.0
0.7
pF VDS = -15V, ID = -10mA, f = 1MHz (Note 4)
Coss
Output Capacitance
3.0
RE(Yfs)
Common Source Forward Transconductance 1200
µs
VDS = -15V, ID = -10mA, f = 100MHz (Note 4)
MATCHING CHARACTERISTICS 3N165
SYMBOL
Yfs1 / Yfs2
VGS1-2
∆VGS1−2
∆T
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature
MIN
0.90
MAX
1.0
100
100
UNITS
mV
µV/ ^oC
NOTES: 1. See handling precautions on 3N170 data sheet.
2. Per transistor.
3. Devices must not be tested at ±125V more than once, nor longer than 300ms.
4. For design reference only, not 100% tested.
TEST CONDITIONS
VDS = -15V, ID = -500µA, f = 1kHz
VDS = -15V, ID = -500µA
VDS = -15V, IA = -500µA
TA = -55^oC to +25^oC