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VN0605T Datasheet, PDF (1/2 Pages) Calogic, LLC – VN0605T N-Channel Enhancement-Mode MOS Transistor
VN0605T
N-Channel Enhancement-Mode
MOS Transistor
VN0605T
CORPORATION
FEATURES
• Low rDS(on) <5Ω
• Low cost
APPLICATIONS
Switching
•• Amplification
PIN CONNECTIONS
1
CD5
3
2
1 DRAIN
2 SOURCE
3 GATE
ORDERING INFORMATION
Part
Package
Temperature Range
VN0605T Surface Mount SOT-23
-55oC to +150oC
For sorted chips in carriers see 2N7000
TOP VIEW
2
1
3
SOT-23
D
G
S
PRODUCT MARKING
VN0605T
V05
ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted)
SYMBOL
PARAMETERS/TEST CONDITIONS
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA = 25oC
ID
Continuous Drain Current
TA = 100oC
IDM
Pulsed Drain Current1
PD
Power Dissipation
TA = 25oC
TA = 100oC
TJ
Operating Junction Temperature Range
Tstg
Storage Temperature Range
TL
Lead Temperature (1/16" from case for 10 sec.)
THERMAL RESISTANCE RATINGS
SYMBOL
THERMAL RESISTANCE
RthJA
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
LIMITS
60
±30
0.18
0.11
0.72
0.36
0.14
-55 to 150
-55 to 150
300
LIMITS
350
UNITS
V
A
W
oC
UNITS
K/W