M116 Datasheet, PDF (1/1 Pages) Calogic, LLC – Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier

CORPORATION
Diode Protected N-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
M116
FEATURES
Low IGSS
•• _{Integrated Zener Clamp for Gate Protection}
PIN CONFIGURATION
TO-72
1003Z
C
G
S
D
DEVICE SCHEMATIC
1
ABSOLUTE MAXIMUM RATINGS
(TA = 25^oC unless otherwise specified)
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.1mA
Storage Temperature Range . . . . . . . . . . . . . -65^oC to +200^oC
Operating Temperature Range . . . . . . . . . . . -55^oC to +125^oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above 25^oC . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/^oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
M116
XM116
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55^oC to +125^oC
-55^oC to +125^oC
2
3
4
0330
ELECTRICAL CHARACTERISTICS (TA = 25^oC and VBS = 0 unless otherwise specified)
SYMBOL
PARAMETER
rDS(on)
Drain Source ON Resistance
VGS(th)
BVDSS
BVSDS
BVGBS
ID(OFF)
IS(OFF)
IGSS
Cgs
Cgd
Cdb
Ciss
Gate Threshold Voltage
Drain-Source Breakdown Voltage
Source-Drain Breakdown Voltage
Gate-Body Breakdown Voltage
Drain Cuttoff Current
Source Cutoff Current
Gate-Body Leakage
Gate-Source (Note 1)
Gate-Drain Capacitance (Note 1)
Drain-Body Capacitance (Note 1)
Input Capacitance (Note 1)
MIN
MAX
UNITS
TEST CONDITIONS
100
Ω
VGS = 20V, ID = 100µA
200
VGS = 10V, ID = 100µA
1
5
VGS = VDS, ID = 10µA
30
V
ID = 1µA, VGS = 0
30
IS = 1µA, VGD = VBD = 0
30
60
IG = 10µA, VSB = VDB = 0
10
nA
VDS = 20V, VGS = 0
10
VSD = 20V, VGD = VBD = 0
100
pA
VGS = 20V, VDS = 0
2.5
VGB = VDB = VSB = 0, f = 1MHz
2.5
Body Guarded
pF
7
VGB = 0, VDB = 10V, f = 1MHz
10
VGB = 0, VDB = 10V, VBS = 0, f = 1MHz
NOTE 1: For design reference only, not 100% tested.