3N163_15 Datasheet, PDF (1/2 Pages) Calogic, LLC – P-Channel Enhancement Mode

P-Channel Enhancement Mode
MOSFET General Purpose
Amplifier Switch
LLC
3N163 / 3N164
FEATURES
Very High Input Impedance
• _{High Gate Breakdown}
• _{Fast Switching}
•• _{Low Capacitance}
PIN CONFIGURATION
TO-72
1503
C
G
S
D
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA = 25^oC unless otherwise specified)
Drain-Source or Drain-Gate Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V
Static Gate-Source Voltage
3N163. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40V
3N164. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±30V
Transient Gate-Source Voltage (Note 2) . . . . . . . . . . . . ±125V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Storage Temperature . . . . . . . . . . . . . . . . . . . -65^oC to +200^oC
Operating Temperature . . . . . . . . . . . . . . . . . -55^oC to +150^oC
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300^oC
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375mW
Derate above +25^oC . . . . . . . . . . . . . . . . . . . . . . 3.0mW/ ^oC
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
3N163-64
X3N163-64
Package
Hermetic TO-72
Sorted Chips in Carriers
Temperature Range
-55^oC to +150^oC
-55^oC to +150^oC
ELECTRICAL CHARACTERISTICS (TA = 25^oC unless otherwise specified)
SYMBOL
PARAMETER
3N163
3N164
UNITS
MIN MAX MIN MAX
TEST CONDITIONS
IGSS
Gate-Body Leakage Current
-10
-10
pA
VGS = -40V, VDS = 0 (3N163)
VGS = -30V, VDS = 0 (3N164)
-25
-25
TA = +125^oC
BVDSS
Drain-Source Breakdown Voltage
-40
-30
ID = -10µA, VGS = 0
BVSDS
VGS(th)
Source-Drain Breakdown Voltage
Threshold Voltage
-40
-30
IS = -10µA, VGD = 0, VBD = 0
-2.0 -5.0 -2.0 -5.0
V
VDS = VGS, ID = -10µA
VGS(th)
Threshold Voltage
-2.0 -5.0 -2.0 -5.0
VDS = -15V, ID = -10µA
VGS
Gate Source Voltage
-2.5 -6.5 -2.5 -6.5
VDS = -15V, ID = -0.5mA
IDSS
Zero Gate Voltage Drain Current
ISDS
Source Drain Current
200
400
VDS = -15V, VGS = 0
pA
400
800
VSD = 15V, VGS = VDB = 0
rDS(on)
Drain-Source on Resistance
250
300 ohms VGS = -20V, ID = -100µA
ID(on)
On Drain Current
-5.0 -30.0 -3.0 -30.0 mA VDS = +15V, VGS = -10V
CALOGIC LLC, 237 WHITNEY PLACE, FREMONT, CA 94539, 510-656-2900 PHONE, 510-651-1076 FAX
DS017 REV A